Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures
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چکیده
منابع مشابه
Gate-tunable high mobility remote-doped InSb/In12xAlxSb quantum well heterostructures
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A. M. Gilbertson,1,2 M. Fearn,1 J. H. Jefferson,1 B. N. Murdin,3 P. D. Buckle,1 and L. F. Cohen2 1QinetiQ, St. Andrews Road, Malvern, Worcestershire WR14 3PS, United Kingdom 2Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ, United Kingdom 3Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom Received 5 February 2008; published ...
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